Samsung showed RDIMM capacity of 256 GB | |
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| Samsung Electronics earlier this month demonstrated its first 256 GB memory module for the next generation of servers. The new register memory module (Registered DIMM, RDIMM) is based on 16-Gigabit DDR4 chips, presented at the beginning of this year. The presented RDIMM will offer higher performance and lower power consumption compared to the two 128GB LRDIMM modules that are used today. Register memory module DDR4 memory with capacity of 256 GB with support for parity (error-correcting code, ECC) is 36 layered memory chips with a capacity of 8 GB (64 GB), and chip-register IDT 4RCD0229K, which buffers the Add/Cmd signals to increase the number of supported memory channel rank. Each of the 36 chips is based on four 16-Gbit crystals connected by vertical through connections of type TSV (through silicon via, TSV). From an architectural point of view, the 256 GB Samsung module is an eight-rank module, as it uses two physical and four logical ranks (with some stretch we can say that it is two four-rank modules). It is interesting to note that Samsung offers an octagonal module in the design version of RDIMM, not LRDIMM. The latter type of modules uses the Isolation Memory Buffer (iMB) chip to buffer both Cmd/Add signals and data (data) signals, essentially isolating the memory chips from the controller that "sees" only the iMB and switching to serial/packet data mode for the specified signals. In this way, LRDIMM provides the ability to install multiple four - or eight-rank DRAM modules on a single memory channel. Of course, the iMB chip itself consumes energy, and the serial mode of operation has a negative impact on performance. | |
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